smd type ic www.kexin.com.cn 1 smd type ic p-channel 1.8-v (g-s) mosfet KI4433DY features trenchfet power mosfets fast switching 100% r g tested absolute maximum ratings ta = 25 symbol 10 secs steady state unit v ds v gs t a =25 -3.9 -2.9 t a =85 -2.8 -2.1 pulsed drain current i dm continuous source current * i s -2.1 -1.2 a t a =25 2.5 1.4 t a =85 1.3 t j ,t stg * surface mounted on 1" x 1" fr4 board. a -10 parameter w p d drain-source voltage v gate-source voltage maximum power dissipation * continuous drain current (t j =150 )* i d operating junction and storage temperature range -20 8 -55to150 thermal resistance ratings ta = 25 symbol typical maximum unit t 10 sec 40 50 steady state 75 90 maximum junction-to-foot(drain) steady state r thjf 19 25 * surface mounted on 1" x 1" fr4 board. maximum junction-to-ambient * r thja /w parameter
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.45 -1.0 v gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds =-20v,v gs =0v -1 a v ds =-20 v, v gs =0v,t j =85 -5 a on-state drain current* i d(on) v ds -5v,v gs =- 4.5 v -10 a v gs =-4.5v,i d = -2.7 a 0.095 0.110 v gs =-2.5v,i d = -2.2a 0.137 0.160 v gs = -1.8v, i d = -1 a 0.205 0.24 forward transconductance * g fs v ds =-10v,i d =-2.7a 7 s schottky diode forward voltage * v sd i s = -0.9a, v gs = 0 v -0.8 -1.2 v total gate charge q g 5.1 7.7 nc gate-source charge q gs v ds =-10v,v gs =-4.5v,i d = -2.7a 1.2 nc gate-drain charge q gd 1.0 nc gate resistance r g 369.7 turn-on delay time t d(on) 16 25 ns rise time t r v dd =-10v,r l =10 30 45 ns turn-off delay time t d(off) i d =-1a,v gen =-4.5v,r g =6 30 45 ns fall time t f 27 40 ns source-drain reverse recovery time t rr i f =-0.9a,d i /d t = 100 a/ s 20 40 ns * pulse test; pulse width 300 s, duty cycle 2%. i dss zero gate voltage drain current r ds(on) drain-source on-state resistance KI4433DY
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